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Protection Circuits
The difference between engineering and experimentation: Protection circuits keep the board alive through the first power-on
ESD Protection
Problem
Human body static electricity: Up to 15kV (discharge you can't feel)
Device tolerance: MOSFET gate ~20V, CMOS IC ~2kV (HBM)
Dry winter, walking on carpet in slippers → touch the board → IC dies
Symptoms: "It worked yesterday, but not today."
Protection Components
TVS Diode (Most Common)
Selection:
Operating Voltage Vrwm > Maximum normal voltage of the protected signal
Clamping Voltage Vcl < Maximum withstand voltage of the protected device
Power: Based on ESD rating (IEC 61000-4-2)
Layout Golden Rule:
TVS must be placed next to the connector, not next to the IC!
Trace: Connector → TVS (as close as possible) → Series Resistor/Ferrite Bead → IC
Keep the TVS to GND loop as short as possible
USB Signal Line ESD Protection
USB 2.0 (D+/D-): Use dedicated USB ESD chips
Example: USBLC6-2, SRV05-4
Capacitance < 2.5pF (otherwise it affects high-speed signals)
USB 3.x (SuperSpeed): Must use ultra-low capacitance TVS
Example: TPD4E05U06 (< 0.5pF)
VBUS: Use 5V~24V TVS (depending on PD voltage)
GPIO / Low-Speed Signals
Simple Solution: Series Resistor + Shunt TVS
GPIO ── 100Ω ──┬── TVS → GND
└── To External
Resistor limits ESD current, TVS clamps voltage
100Ω ~ 1kΩ, depending on signal speed
Reverse Polarity Protection
Problem
DC barrel jack / terminal block → Polarity reversed → Board burns out
Especially: Late at night, under deadline, when wiring for others
Solution 1: Series Diode (Simplest)
Vin ──▸├── System
│
(Voltage Drop Vf)
Pros: Simplest
Cons: Voltage drop 0.3~0.7V, severe heating at high currents
P_loss = Vf × I → 3A×0.7V=2.1W pure waste
Applicable: <1A low current / voltage drop insensitive
Solution 2: PMOS Reverse Polarity Protection ★ Recommended
S D
Vin ────┬── P-MOSFET ──── System
│ G
│ │
└───┤├── GND
Rgs (10k~100k)
Normal: Vin+ connected to S, G pulled to GND via R
→ Vgs = -Vin → PMOS turns on → Almost no voltage drop
Reverse: G pulled to Vin+ via R → Vgs ≈ 0 → PMOS turns off
→ Body diode reverse biased → System has no power
Voltage Drop = I × Rds(on) → Typically < 0.1V @ 3A (Rds(on)=30mΩ)
Loss = I² × Rds(on) = 0.27W @ 3A (vs 2.1W for diode!)
Select MOSFET: Lower Rds(on) is better, Vgs(th) must be lower than Vin
Vds > Vin (with margin)
Solution 3: Bridge Rectifier (Fully Automatic)
Works regardless of polarity, but voltage drop is 2×Vf (two diodes in series)
Applicable: Cost-insensitive, low current
Fuse Selection
Types
| Type | Blow Speed | Typical Application |
|---|---|---|
| Fast-acting (Fast) | ms level | Semiconductor protection |
| Slow-acting (Slow/T) | Hundreds of ms to s | Motors/Transformers/Capacitive loads |
| Resettable (PTC) | Does not blow, limits current | USB output/Battery packs |
| SMD Fuse | ms level | Low current on PCB |
Selection Parameters
Rated Current In: Normal operating current × 1.25 (with margin)
Example: Operating at 2A → Select 2.5A
Rated Voltage: Must be ≥ Maximum circuit voltage
Breaking Capacity: Maximum current the fuse can interrupt during a fault
Battery powered: At least 50A (short-circuit current is huge!)
I²t: Energy integral, energy required to blow
When selecting a fuse, ensure I²t(fuse) < I²t(MOSFET withstand)
Otherwise, the MOSFET burns out before the fuse blows
Resettable Fuse (PTC)
Principle: Overcurrent → Heating → Resistance increases sharply → Current limiting
Reset: Automatically recovers after power-off and cooling
Pros: Reusable, no need to replace
Cons: Slow action (ms~s), high leakage current, resistance sensitive to temperature
Typical Applications: USB port protection (500mA/1A/2A ratings)
Battery pack output
Not suitable for: Precision circuits requiring fast cutoff
Inrush Current Suppression
Power-on Inrush
Capacitive load at power-on:
Capacitor initial voltage 0V → Equivalent short circuit → Current spike
┌── R ──┬──
Vin ─┘ ┌┴┐
│C│ (Large Capacitor)
└┬┘
│
GND
I_peak = Vin / (R_trace + ESR)
Can be several times the normal current → Blows fuse / triggers overcurrent protection
Solutions
1. NTC Thermistor (Simplest):
High resistance when cold → Limits current → Self-heating → Resistance drops → Normal conduction
Cons: Residual resistance remains when hot, ineffective with frequent switching (hasn't cooled down)
2. Soft Start (Active):
MOSFET gate charged slowly → Gradual turn-on → Limits current slew rate
Requires additional RC + MOSFET
3. Current Limiting IC:
Dedicated Hot Swap Controller
e.g., TPS2490, LM5069
Used in servers/telecom cards (hot-swappable)
Overvoltage Protection
TVS clamping is transient (μs level)
Sustained overvoltage requires different solutions:
1. Zener + Fuse (Crowbar):
Vin ── Fuse ──┬── System
├── Zener → GND
Vin > Vz → Zener conducts → High current → Fuse blows
Simple and crude, but requires replacing the fuse
2. OVP IC:
Detects voltage > Threshold → Cuts off MOSFET
e.g., NCP346, AP9101C
Recoverable, no need to replace fuse
3. OVP at LDO Input:
Many LDOs have built-in input overvoltage protection
Automatically shuts down when out of range
Practical Checklist
□ Every external connector has ESD protection (TVS close to connector)
□ DC power input has reverse polarity protection (PMOS or diode)
□ Every power rail has an appropriate fuse
□ VBUS/USB power has PTC resettable fuse
□ Large capacitor input has inrush suppression strategy
□ Power loop area is small (reduces spikes caused by parasitic inductance)
□ Inductive loads like relays/motors have flyback diodes
□ MOSFET gates have protection (TVS or Zener + series resistor)
Keywords: ESD, TVS, Reverse Polarity Protection, PMOS, Fuse, PTC, Inrush, Soft Start, Overvoltage Protection, Flyback Diode